Dage ships CV-profiler to Spanish solar institute

<font face="Arial">Dage ships CV-profiler to Spanish solar institute
Date announced: 31 Jan 2006
Dage EEV, a supplier of characterisation equipment and materials, is shipping an electrochemical CV Wafer Profiler CVP21 to the Instituto de Energia Solar in Madrid. The CVP21 will be used to analyze carrier concentration profiles for solar cell applications in III-V semiconductors and silicon.
The ECV-Profiler CVP21 can be used to check the doping in planar semiconductor structures, such as as-grown crystals, and epitaxial layers. Dage says that the CVP21 is a completely new piece of equipment that ensures operator-independent measurements with high reproducibility and precision.
The CVP21 can measure a very wide range of samples ranging from 2x2 mm2 samples to complete 8 inch wafers. A further option is the installation of a wafer stepper for wafer topography measurements. Its electronic system means that a wide range of doping levels can be measured from 1012 to 1022 cm-3.
The profiler's fluid system ensures automatic handling of the complete measurement process including loading/unloading of the electrolyte and the processing of sophisticated etch schemes for semiconductors where etching is problematic. The software is production proof and is optimized to be operator friendly, including fully automated operation, rich evaluation possibilities and wafer topography tools, says the company.
According to Dage, compared to Hall measurements or spreading resistance profiling, ECV-Profiling has the advantage that epi layers may be measured without restriction to substrate conductivity, because ECV-Profiling analyzes only the surface capacitance of the semiconductor. In addition, the sample does not need to be broken or structured, so even large wafers may be measured at a small measurement point without the destruction of the wafer.
Often the measurement is used for calibration of epitaxial equipment. In this case ECV-Profiling has the further advantages that several layers may be measured in one process, and that information is gathered about the quality of the interface and the homogeneity of the doping throughout the layer, says Dage.
The materials which can be measured include silicon and germanium, standard III-V semiconductors such as GaAs, InP, the ternary and quaternary combinations as such as AlGaAs, InAlGaP, and wide bandgap semiconductors such as GaN, AlGaN, AlInN, SiC or ZnO. Compared to SIMS, ECV-Profiling has several advantages, because it measures electrical activation of the dopants and offers quick and straightforward operation without the need for material calibration runs.
In the field of solar cell research, the CVP21 system is currently being used at many research centres. It was first used in 1999 by the Fraunhofer Institute for Solar Energy Systems (ISE) in Freiburg, Germany, and since then it has been installed at the Institute for Molecules and Materials (IMM) in Nijmegen, The Netherlands, the RWE Space Solar Power GmbH in Heilbronn, Germany, the Hahn-Meitner-Institute (HMI) in Berlin, Germany, and the Institute for Solar Energy Research (ISFH) in Hamelin/Emmerthal, Germany.

Date announced: 31 Jan 2006
Dage EEV, a supplier of characterisation equipment and materials, is shipping an electrochemical CV Wafer Profiler CVP21 to the Instituto de Energia Solar in Madrid. The CVP21 will be used to analyze carrier concentration profiles for solar cell applications in III-V semiconductors and silicon.
The ECV-Profiler CVP21 can be used to check the doping in planar semiconductor structures, such as as-grown crystals, and epitaxial layers. Dage says that the CVP21 is a completely new piece of equipment that ensures operator-independent measurements with high reproducibility and precision.
The CVP21 can measure a very wide range of samples ranging from 2x2 mm2 samples to complete 8 inch wafers. A further option is the installation of a wafer stepper for wafer topography measurements. Its electronic system means that a wide range of doping levels can be measured from 1012 to 1022 cm-3.
The profiler's fluid system ensures automatic handling of the complete measurement process including loading/unloading of the electrolyte and the processing of sophisticated etch schemes for semiconductors where etching is problematic. The software is production proof and is optimized to be operator friendly, including fully automated operation, rich evaluation possibilities and wafer topography tools, says the company.
According to Dage, compared to Hall measurements or spreading resistance profiling, ECV-Profiling has the advantage that epi layers may be measured without restriction to substrate conductivity, because ECV-Profiling analyzes only the surface capacitance of the semiconductor. In addition, the sample does not need to be broken or structured, so even large wafers may be measured at a small measurement point without the destruction of the wafer.
Often the measurement is used for calibration of epitaxial equipment. In this case ECV-Profiling has the further advantages that several layers may be measured in one process, and that information is gathered about the quality of the interface and the homogeneity of the doping throughout the layer, says Dage.
The materials which can be measured include silicon and germanium, standard III-V semiconductors such as GaAs, InP, the ternary and quaternary combinations as such as AlGaAs, InAlGaP, and wide bandgap semiconductors such as GaN, AlGaN, AlInN, SiC or ZnO. Compared to SIMS, ECV-Profiling has several advantages, because it measures electrical activation of the dopants and offers quick and straightforward operation without the need for material calibration runs.
In the field of solar cell research, the CVP21 system is currently being used at many research centres. It was first used in 1999 by the Fraunhofer Institute for Solar Energy Systems (ISE) in Freiburg, Germany, and since then it has been installed at the Institute for Molecules and Materials (IMM) in Nijmegen, The Netherlands, the RWE Space Solar Power GmbH in Heilbronn, Germany, the Hahn-Meitner-Institute (HMI) in Berlin, Germany, and the Institute for Solar Energy Research (ISFH) in Hamelin/Emmerthal, Germany.</font><br /><hr /> Orignal From: <a href="http://www.rayscience.com/blog/?p=85" target=_blank>Dage ships CV-profiler to Spanish solar institute</a><br />